DRAM Full Form

What is the full form of DRAM ?

The Full Form of DRAM is Dynamic Random-Access Memory. DRAM is a random-access memory of a semiconductor that holds every bit of information inside a cell of a memory featuring a tiny capacitor and a transistor that operates using up the (MOS) technology. Since DRAM can transfer its state from 0 to 1 over a specified period caused by the charge leakage originating from the capacitor, DRAM can also be associated with the “Dynamic” feature.

This Story also Contains

1. What is the full form of DRAM ?
2. History of DRAM
3. DRAM Characteristics
4. DRAM Subtypes
5. Advantages of DRAM
6. Drawbacks of DRAM

History of DRAM

In a Toshiba calculator in 1965, DRAM made its capacitive debut in a version made of bipolar memory cells. In the same year, IBM produced a silicon memory device with 16 bits. However, the performance of magnetic-core memory was superior to that of bipolar DRAM at the time. This was the case with DRAM before the invention of the metal-oxide-semiconductor field-effect transistor (MOSFET), which led to the metal-oxide-semiconductor DRAM, also known as MOS DRAM. The MOS DRAM patent was granted in 1968. In 1969, Intel developed DRAM by employing a three-transistor cell.

The Intel 1103 device, which was introduced in 1970, helped Intel enhance its DRAM product. Around this period, magnetic-core memory started to lose market share to MOS memory. In 1973, the Mostek MK4096 4 Kb DRAM was also created. Multiplexed row and column address lines were utilized for the first time in this DRAM. The Mostek MK4096 reduced the necessary number of address lines in half, allowing it to fit in small packaging with a low pin count.

DRAM Characteristics

Data is only kept in the Dynamic Random-Access Memory (DRAM Full Form) for a short time. To store data, it needs power or electricity. Let us now examine the characteristics of DRAM:

• Dynamic random-access memory (DRAM) is less expensive than static random-access memory (SRAM).

• It is utilized in the production of RAM with large capacities.

• It has a high-capacity limit.

• Its structure is straightforward and simple to upkeep.

• In comparison to SRAM, it is smaller in size.

• It uses less power than SRAM.

DRAM Subtypes

There are many types of DRAMS that can be used in a device. Some examples include the following:

• The memory controller is informed of the CPU clock cycle when synchronized DRAM (SDRAM) synchronizes memory speeds with CPU clock speeds. The CPU can now carry out more instructions at once as a result of this.

• Graphics cards began using Rambus DRAM (RDRAM) more frequently in the early 2000s.

• By employing double pinning, double data rate SDRAM (DDR SDRAM) nearly doubles the bandwidth of SDRAM's data rate. Data can be transferred on the rising and falling edges of a clock signal thanks to this procedure. Over the course of time, it has been offered in a variety of iterations, including DDR2 SDRAM, DDR3 SDRAM, and DDR4 SDRAM.

• By focusing on quick page access, Fast Page Mode DRAM (FPM DRAM) performs better than other DRAM types.

• On microprocessors like the Intel Pentium, extended data out DRAM (EDO DRAM) reduces the amount of time it takes to read data from

• memory.

Samsung, Rambus, PNY Technologies, and SK Hynix are major DRAM producers.

Advantages of DRAM

• A DRAM memory can be refreshed and deleted while the program is running.

• DRAM costs are significantly lower than those of static random-access memory.

• For DRAM, storage capacity will be large.

• DRAM uses a more straightforward structure than static random-access memory to produce larger RAM space for the system.

Drawbacks of DRAM

• It runs at a slower rate than SRAM. As a result, accessing data or information takes longer.

• Data loss occurs when the power is turned off and it takes a long time to access the information

• Compared to static random-access memory, power consumption is higher.