The fees for the course Basics of Semiconductor Microwave Devices is -
Head
Amount in INR
Exam fees
Rs. 1000
The Syllabus
Introduction to the course: perspective & historical overview, Applications of various RF devices today
Basics of heterojunctions and heterostructure physics, Basics of III-nitrides and polarization Schottky multipliers & varactors
Transferred Electron Devices: Gunn Diode, Avalanche Transit Devices: IMPATT
III-V MESFET: physics and transport, I-V, load line, transconductance, fabrication. Intro to JFOM
III-V HEMT/MODFET – physics, modulation doping & the formation of 2DEG, breakdown, gain, traps, dispersion.
p-HEMT, recess gate, field-plate, power cell, multi-finger devices, fabrication
GaN HEMTs – benefits of WBG, various aspects of GaN RF HEMT such as substrate, processing, dispersion & virtual gate, leakage, stack design, compensation doping
Basics of RF CMOS;LDMOS – device physics, transport, breakdown, On resistance, snapback
LDMOS - layout & design, bond pad manifold, frequency aspects, the concept of RESURF
Bipolar devices for RF: working of HBT, Early Effect, Kirk Effect, Gain, Common Emitter & Common Base mode, small-signal model
Bipolar devices: base design, collector design, emitter ballast, SiGe bipolar, FET vs bipolar for RF, fabrication
Microwave concepts for devices and packaging: S-parameters & 2-port analysis, concept of impedance, Intro to Smith chart, de-embedding parasitics, derivation of cut-off frequencies and MAG/MSG, Transmission lines & waveguides, concept of impedance matching, Basics of RF device packaging and thermal management