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what is the difference between base width modulation and punch through effect? in BEEE.


Akash 27th Dec, 2019
Answer (1)
Arin Mishra 27th Dec, 2019

Hello,

In Punch Through An emitter-to-collector breakdown which can occur in a junction transistor with very narrow base region at sufficiently high collector voltage when the space-charge layer extends completely across the base region.

And in Base width Modulation As the voltages applied to the base-emitter and base-collector junctions are changed, the depletion layer widths and the quasi-neutral regions vary as well. This causes the collector current to vary with the collector-emitter voltage.

Hope this Helps,

Regards,

Arin.

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1 Comment
Comments (1)
3rd Jan, 2020
thanku for your response but sorry it was not clear.
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