what is the difference between base width modulation and punch through effect? in BEEE.
Hello,
In Punch Through An emitter-to-collector breakdown which can occur in a junction transistor with very narrow base region at sufficiently high collector voltage when the space-charge layer extends completely across the base region.
And in Base width Modulation As the voltages applied to the base-emitter and base-collector junctions are changed, the depletion layer widths and the quasi-neutral regions vary as well. This causes the collector current to vary with the collector-emitter voltage.
Hope this Helps,
Regards,
Arin.
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